BSS84PH6433XTMA1

P-Channel MOSFET, 60V, 170mA, SOT-23-3, Surface Mount

P-Channel JFET, designed for surface mount applications in a SOT-23-3 plastic package. Features a continuous drain current of 170mA and a drain-to-source breakdown voltage of -60V. Offers a low drain-to-source on-resistance (Rds On) of 8 Ohms maximum and a gate-to-source voltage rating of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW. This component is HALOGEN FREE and ROHS COMPLIANT.

PackageSOT-23-3

MountingSurface Mount

PolarityP-CHANNEL

Power360mW

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Technical Specifications

Infineon BSS84PH6433XTMA1 technical specifications.

General

Package/Case	SOT-23-3
Contact Plating	Tin, Matte
Continuous Drain Current (ID)	170mA
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	5.8R
Drain to Source Voltage (Vdss)	60V
Fall Time	20.5ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	19pF
Length	2.9mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	10000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	360mW
Radiation Hardening	No
Rds On Max	8R
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	8.6ns
Turn-On Delay Time	6.7ns
Width	1.3mm