P-Channel JFET, designed for surface mount applications in a SOT-23-3 plastic package. Features a continuous drain current of 170mA and a drain-to-source breakdown voltage of -60V. Offers a low drain-to-source on-resistance (Rds On) of 8 Ohms maximum and a gate-to-source voltage rating of 20V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW. This component is HALOGEN FREE and ROHS COMPLIANT.
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Infineon BSS84PH6433XTMA1 technical specifications.
| Package/Case | SOT-23-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 170mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 5.8R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 19pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 8.6ns |
| Turn-On Delay Time | 6.7ns |
| Width | 1.3mm |
| RoHS | Compliant |
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