P-channel enhancement mode MOSFET for through-hole mounting. Features a 3-pin TO-92 plastic package with formed leads and a 2.54mm pin pitch. Offers a maximum drain-source voltage of 240V and a continuous drain current of 0.15A at 33°C. Maximum power dissipation is 1000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Infineon BSS92 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.2 |
| Package Width (mm) | 4.2 |
| Package Height (mm) | 5.2 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 240V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.15@Ta=33CA |
| Maximum Drain Source Resistance | 20000@10VmOhm |
| Typical Input Capacitance @ Vds | 95@25VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSS92 Datasheet
Download the complete datasheet for Infineon BSS92 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.