This device is a 25 V N-channel power MOSFET in Infineon's OptiMOS™ 5 family. It is offered in a compact PQFN package and is intended for high-performance synchronous rectification in server and telecom switched-mode power supplies. The device integrates a Schottky-like diode and is specified with 1.1 mΩ maximum RDS(on). Its small package and low on-resistance support high power density designs.
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| Channel Type | N-channel |
| Technology | OptiMOS™ 5 |
| Drain-Source Voltage Max | 25V |
| RDS(on) Max | 1.1mΩ |
| RDS(on) Test Condition | VGS = 4.5 V |
| Package Name | PQFN 3x3 |
| Infineon Package | PG-TSDSON-8 |
| Package Size | 3.3 x 3.3mm |
| Integrated Diode | Schottky-like diode |
| Packing Type | Tape & Reel |
| Standard Packaging | 5000pcs |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
