BSZ018NE2LSI

Power Field-Effect Transistor, 22A I(D), 25V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Resistance0.0015R

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Infineon BSZ018NE2LSI technical specifications.

Continuous Drain Current (ID)

40A

Drain to Source Voltage (Vdss)

25V

Halogen Free

Input Capacitance

2.5nF

Lead Free

Max Power Dissipation

69W

Package Quantity

Packaging

Tape and Reel

Rds On Max

1.8mR

Reach SVHC Compliant

Yes

Resistance

0.0015R

RoHS Compliant

Yes

Series

OptiMOS™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.