N-Channel Power MOSFET, 30V Vdss, 22A continuous drain current, and 1.9mΩ on-state resistance. Features a low Drain to Source Resistance of 1.6mΩ and a maximum power dissipation of 69W. This silicon Metal-oxide Semiconductor FET is designed for surface mounting in a TSDSON-8 plastic package with tin contact plating. Operating temperature range is -55°C to 150°C, with a gate-to-source voltage of 20V and a threshold voltage of 2V.
MountingSurface Mount
Power69W
Quick Jump:
Technical Specifications
Infineon BSZ019N03LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 1.9mR |
| Package Quantity | 5000 |
| Power Dissipation | 69W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ019N03LSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ019N03LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.