N-channel MOSFET with 40V drain-source voltage and 40A continuous drain current. Features low Rds(on) of 2.8mΩ at 10V Vgs and 21A, with a maximum power dissipation of 2.1W. Operates across a wide temperature range from -55°C to 150°C. This silicon, metal-oxide semiconductor FET is surface mountable in a TSDSON-8 package, supplied on tape and reel. RoHS compliant and halogen-free.
MountingSurface Mount
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Technical Specifications
Infineon BSZ028N04LSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ028N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ028N04LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.