Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8
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Infineon BSZ035N03LSGATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 3.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.8ns |
| RoHS | Compliant |
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