N-Channel Power MOSFET, 25V drain-source voltage, 16A continuous drain current, and 0.0051 ohm on-resistance. Features a 2V threshold voltage, 2.2ns fall time, 3.3ns turn-on delay, and 15ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 37W. Surface mountable in a TSDSON-8 package, this RoHS compliant component is designed for efficient power switching applications.
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Infineon BSZ036NE2LSATMA1 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 3.3ns |
| RoHS | Compliant |
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