N-Channel Power MOSFET, 40V Vdss, 40A Continuous Drain Current (ID), and 3.3mR Drain to Source Resistance. Features low on-state resistance of 4mR, 69W maximum power dissipation, and a 150°C maximum operating temperature. This surface mount device offers fast switching with a 5.4ns fall time and 8.5ns turn-on delay. Constructed with silicon and metal-oxide semiconductor technology, it is RoHS compliant and packaged in TSDSON-8.
MountingSurface Mount
Power69W
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Technical Specifications
Infineon BSZ040N04LSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| On-State Resistance | 4mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 69W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ040N04LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSZ040N04LSGATMA1 to view detailed technical specifications.
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