Infineon
BSZ042N04NSGXT
Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSZ042N04NSGXT technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ042N04NSGXT Datasheet
Download the complete datasheet for Infineon BSZ042N04NSGXT to view detailed technical specifications.
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