N-Channel Power MOSFET, 25V drain-source voltage, 12A continuous drain current, and 0.0081 ohm on-resistance. Features a 2V threshold voltage and 20V gate-source voltage rating. This single-element silicon metal-oxide semiconductor FET offers a maximum power dissipation of 26W and operates from -55°C to 150°C. Surface mountable in a TSDSON-8 package with tin contact plating, it is RoHS compliant.
MountingSurface Mount
Power2.1W
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Technical Specifications
Infineon BSZ060NE2LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ060NE2LSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ060NE2LSATMA1 to view detailed technical specifications.
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