BSZ075N08NS5ATMA1

N-Channel Power MOSFET with 80V drain-source voltage and 40A continuous drain current. Features a low on-resistance of 0.0075 ohms, enabling efficient power switching. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is designed for high-performance applications. It is housed in a GREEN, plastic TSDSON-8FL package with 8 pins and 3 terminals in a dual position.