N-Channel Power MOSFET with 80V drain-source voltage and 40A continuous drain current. Features a low on-resistance of 0.0075 ohms, enabling efficient power switching. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is designed for high-performance applications. It is housed in a GREEN, plastic TSDSON-8FL package with 8 pins and 3 terminals in a dual position.
Infineon BSZ075N08NS5ATMA1 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
