N-Channel Power MOSFET featuring 80V drain-source voltage and a low on-resistance of 0.0084 ohms at 40A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor is housed in a TSDSON-8FL package with 8 pins and 3 terminals. Designed for high-power applications, it offers efficient switching and conduction characteristics.
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Technical Specifications
Infineon BSZ084N08NS5ATMA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSZ084N08NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSZ084N08NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.