The BSZ088N03MSGATMA1 is a 30V N-Channel MOSFET from Infineon with a maximum continuous drain current of 40A and a maximum drain to source voltage of 30V. It features a maximum Rds On resistance of 8mR and a maximum power dissipation of 35W. The device is packaged in a SMALL OUTLINE, R-PDSO-N5 package and is suitable for surface mount applications. The BSZ088N03MSGATMA1 operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
Infineon BSZ088N03MSGATMA1 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
No datasheet is available for this part.
