N-channel power MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. Offers low on-state resistance of 1.7mR at 10Vgs. Designed for efficient switching with fast turn-on (5ns) and turn-off (28ns) delay times. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 50W. Packaged in a TSDSON-8 for surface-mount applications.
Resistance0.0009R
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Infineon BSZ0901NSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.85nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| On-State Resistance | 2mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 2mR |
| Resistance | 0.0009R |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ0901NSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ0901NSATMA1 to view detailed technical specifications.
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