Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Infineon BSZ0902NS technical specifications.
| Continuous Drain Current (ID) | 19A |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 2.6mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 4.2ns |
| Width | 3.4mm |
| RoHS | Compliant |
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