Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Infineon BSZ0902NSIATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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