Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Infineon BSZ0904NSIXT technical specifications.
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
