Power Field-Effect Transistor, 11A I(D), 30V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Infineon BSZ0909NSATMA1 technical specifications.
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 34V |
| Drain to Source Resistance | 12mR |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.31nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| On-State Resistance | 12mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 4.5ns |
| RoHS | Compliant |
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