The BSZ097N04LSGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 40V and a maximum gate to source voltage of 20V. The device features a maximum continuous drain current of 12A and an on-state resistance of 9.7 milliohms. It is compliant with RoHS regulations and is packaged in a tape and reel format with 5000 units per package.
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Infineon BSZ097N04LSGATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 8.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 9.7mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| Rds On Max | 9.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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