The BSZ100N03MSG is a N-CHANNEL MOSFET with a continuous drain current of 10A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 10mR and a maximum operating temperature range of -55°C to 150°C. The device is packaged in a GREEN, PLASTIC, TSDSON-8 package and is RoHS compliant. It is suitable for high-power applications due to its maximum power dissipation of 30W.
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Infineon BSZ100N03MSG technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.7nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.8ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ100N03MSG Datasheet
Download the complete datasheet for Infineon BSZ100N03MSG to view detailed technical specifications.
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