The BSZ100N03MSGATMA1 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 30W and a maximum dual supply voltage of 30V. The device is RoHS compliant and has a threshold voltage of 2V. It features a drain to source resistance of 9.1mR and an on-state resistance of 9.1mR. The MOSFET is packaged in a small outline S-PDSO-N5 package and is available in quantities of 5000. It is not Reach SVHC compliant.
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSZ100N03MSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 9.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| On-State Resistance | 9.1mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 9.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ100N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSZ100N03MSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
