The BSZ100N03MSGATMA1 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 30W and a maximum dual supply voltage of 30V. The device is RoHS compliant and has a threshold voltage of 2V. It features a drain to source resistance of 9.1mR and an on-state resistance of 9.1mR. The MOSFET is packaged in a small outline S-PDSO-N5 package and is available in quantities of 5000. It is not Reach SVHC compliant.
Sign in to ask questions about the Infineon BSZ100N03MSGATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSZ100N03MSGATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 9.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| On-State Resistance | 9.1mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 9.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSZ100N03MSGATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
