The BSZ100N06NSATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 36W and a maximum drain to source voltage of 60V. The device is RoHS compliant and features a drain to source resistance of 8.5mR and an on-state resistance of 10mR. It is available in a package quantity of 5000 units, packaged in tape and reel.
MountingSurface Mount
Power36W
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Technical Specifications
Infineon BSZ100N06NSATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.075nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| On-State Resistance | 10mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 36W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ100N06NSATMA1 Datasheet
Download the complete datasheet for Infineon BSZ100N06NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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