This device is an 80 V N-channel power MOSFET in Infineon's OptiMOS™ 5 family. The manufacturer specifies a maximum drain current of 40 A, a maximum RDS(on) of 11 mOhm, and a PQFN 3x3 package identified as PG-TSDSON-8-26. It is designed especially for synchronous rectification in telecom and server power supplies. The product page also lists suitability for solar, low-voltage drive, and adapter applications, with reduced output capacitance and lower RDS(on) than the previous generation.
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Infineon BSZ110N08NS5 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BSZ110N08NS5 to view detailed technical specifications.
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