N-Channel Power MOSFET featuring 80V drain-source voltage and 40A continuous drain current. This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.011 ohms. Designed with a single element and 3 terminals, it is housed in a GREEN, PLASTIC TSDSON-8FL package.
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Technical Specifications
Infineon BSZ110N08NS5ATMA1 technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSZ110N08NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSZ110N08NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.