Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Sign in to ask questions about the Infineon BSZ12DN20NS3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSZ12DN20NS3G technical specifications.
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 680pF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 6ns |
| Width | 3.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSZ12DN20NS3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
