Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Contact Plating | Tin |
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 680pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
