N-Channel Power MOSFET, 100V Drain to Source Breakdown Voltage, 40A Continuous Drain Current, and 16mΩ Rds On Max. This silicon, metal-oxide semiconductor FET features a 2.8V threshold voltage and 1.7nF input capacitance. Designed for surface mounting in a TDSON-8 plastic package, it offers a maximum power dissipation of 63W and operates within a temperature range of -55°C to 150°C. RoHS compliant and halogen-free.
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Infineon BSZ160N10NS3G technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.7nF |
| Lead Free | Contains Lead |
| Length | 3.4mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 13ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ160N10NS3G Datasheet
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