The BSZ180P03NS3EGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum continuous drain current of 39.5A and a maximum drain to source voltage of -30V. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 2.1W. The device is packaged in a small outline S-PDSO-F5 package and is RoHS compliant. It features a threshold voltage of -2.5V and a maximum on-resistance of 18mR.
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| Contact Plating | Tin |
| Continuous Drain Current (ID) | 39.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.22nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -2.5V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSZ180P03NS3EGATMA1 to view detailed technical specifications.
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