Infineon
BSZ340N08NS3G
Power Field-Effect Transistor, 6A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Technical Specifications
Infineon BSZ340N08NS3G technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 630pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ340N08NS3G Datasheet
Download the complete datasheet for Infineon BSZ340N08NS3G to view detailed technical specifications.
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