N-Channel Power MOSFET, 250V Drain-to-Source Voltage (Vdss), 5A Continuous Drain Current (ID), and 0.425 Ohm On-Resistance. This silicon Metal-oxide Semiconductor FET features a surface mount package with tin, matte contact plating. It operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSZ42DN25NS3GATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ42DN25NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSZ42DN25NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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