Infineon
BSZ520N15NS3G
Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Technical Specifications
Infineon BSZ520N15NS3G technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 7ns |
| Width | 3.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ520N15NS3G Datasheet
Download the complete datasheet for Infineon BSZ520N15NS3G to view detailed technical specifications.
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