N-Channel Power MOSFET featuring 150V drain-source voltage and 21A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low on-state resistance of 52mΩ (52 milliohms) and a maximum power dissipation of 57W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. The component is packaged in a TSDSON-8 plastic package on tape and reel.
MountingSurface Mount
Power57W
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Technical Specifications
Infineon BSZ520N15NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 890pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 52mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ520N15NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSZ520N15NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.