N-channel silicon power MOSFET featuring 200V drain-source voltage and 15.2A continuous drain current. This surface-mount device offers a low on-resistance of 0.09 ohms. It operates across a wide temperature range from -55°C to 150°C and is RoHS compliant. The component utilizes tin contact plating and is housed in a TSDSON-8 plastic package.
MountingSurface Mount
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Technical Specifications
Infineon BSZ900N20NS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 15.2A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSZ900N20NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSZ900N20NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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