Infineon
BTS110NKSA1
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Infineon BTS110NKSA1 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
10A
Drain to Source Voltage (Vdss)
100V
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
600pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
No
Series
TEMPFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
20ns
Compliance
RoHS
Not CompliantNo
Datasheet
Infineon BTS110NKSA1 Datasheet
Download the complete datasheet for Infineon BTS110NKSA1 to view detailed technical specifications.
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