Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 600pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | No |
| Series | TEMPFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 20ns |
| RoHS | Not CompliantNo |
