N-channel MOSFET with 60V drain-source breakdown voltage and 11.5A continuous drain current. Features a low Rds(on) of 170mΩ and 40W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Designed for surface mount applications with a TO-220AB package, supplied in tape and reel. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 40ns.
Infineon BTS113A E3045A technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | 11.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 560pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 170mR |
| RoHS Compliant | No |
| Series | TEMPFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon BTS113A E3045A to view detailed technical specifications.
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