Infineon
BTS115ANKSA1
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon BTS115ANKSA1 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15.5A
Drain to Source Voltage (Vdss)
50V
Input Capacitance
735pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
120mR
RoHS Compliant
No
Series
TEMPFET®
Compliance
RoHS
Not Compliant
Datasheet
Infineon BTS115ANKSA1 Datasheet
Download the complete datasheet for Infineon BTS115ANKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
