Power Field-Effect Transistor, 24A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 24A |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 10V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 25ns |
| RoHS | Not CompliantNo |
