N-channel Power MOSFET, 50V drain-source breakdown voltage, 58A continuous drain current, and 18mΩ Rds On. Features a TO-218 package with 150°C maximum operating temperature and 170W power dissipation. Includes 50ns turn-on delay and 350ns turn-off delay.
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| Package/Case | TO-218-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 12.5mm |
| Input Capacitance | 2.9nF |
| Length | 15mm |
| Max Dual Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Number of Channels | 1 |
| Package Quantity | 250 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 350ns |
| Turn-On Delay Time | 50ns |
| Width | 4.9mm |
| RoHS | Compliant |
