
N-channel MOSFET, surface mount, featuring 55V drain-source voltage and 19A continuous drain current. This component offers a low 13mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 170W. Operating across a wide temperature range of -40°C to 175°C, it utilizes a TO-263-5 package with tin contact plating. Key switching characteristics include a 15ns turn-on delay and a 25ns fall time.
Infineon BTS244ZE3062AATMA2 technical specifications.
| Package/Case | TO-263-5 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.66nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TEMPFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.056438oz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BTS244ZE3062AATMA2 to view detailed technical specifications.
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