N-channel power MOSFET featuring 49V drain-source breakdown voltage and 6.5mΩ Rds(on) at 80A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a maximum power dissipation of 300W and operates within a temperature range of -40°C to 175°C. Designed for through-hole mounting in a TO-220-7 package, it exhibits a turn-on delay of 30ns and a fall time of 36ns.
PackageTO-220-7
Current Rating1.7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon BTS282Z technical specifications.
General
| Package/Case | TO-220-7 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 1.7A |
| Drain to Source Breakdown Voltage | 49V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 49V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.8nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | TEMPFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 49V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BTS282Z Datasheet
Download the complete datasheet for Infineon BTS282Z to view detailed technical specifications.
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