Infineon
BTS282ZAKSA1
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN
PackageTO-220-7
MountingThrough Hole
Power300W
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Technical Specifications
Infineon BTS282ZAKSA1 technical specifications.
General
Package/Case
TO-220-7
Continuous Drain Current (ID)
80A
Drain to Source Voltage (Vdss)
49V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.8nF
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6.5mR
RoHS Compliant
Yes
Series
TEMPFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Infineon BTS282ZAKSA1 Datasheet
Download the complete datasheet for Infineon BTS282ZAKSA1 to view detailed technical specifications.
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