N-channel Power MOSFET, N-channel enhancement mode, single element, SIPMOS process technology. Features 200V maximum drain-source voltage and ±20V maximum gate-source voltage. Offers 14.5A maximum continuous drain current and 200mΩ maximum drain-source resistance at 5V. Packaged in a 3-pin TO-220 through-hole configuration with a tab, measuring 10.36mm(Max) length, 4.57mm(Max) width, and 9.45mm(Max) height. Operates from -55°C to 150°C with 95000mW maximum power dissipation.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon BUZ 31 H technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 14.5A |
| Maximum Drain Source Resistance | 200@5VmOhm |
| Typical Input Capacitance @ Vds | 840@25VpF |
| Maximum Power Dissipation | 95000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BUZ 31 H Datasheet
Download the complete datasheet for Infineon BUZ 31 H to view detailed technical specifications.
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