N-channel Power MOSFET, featuring a 200V drain-source voltage and 9.5A continuous drain current. This single-element transistor utilizes SIPMOS process technology and is housed in a TO-220AB package with 3 through-hole pins and a tab. Maximum power dissipation is 75W, with a low drain-source on-resistance of 400mΩ at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Infineon BUZ 32 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 9.25 |
| Seated Plane Height (mm) | 15.95(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9.5A |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Power Dissipation | 75000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BUZ 32 Datasheet
Download the complete datasheet for Infineon BUZ 32 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.