N-channel Power MOSFET, designed for through-hole mounting in a TO-220 package. Features a maximum drain-source voltage of 200V and a continuous drain current of 9.5A. Offers a low drain-source on-resistance of 400mΩ at 10V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 75W.
PackageTO-220
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon BUZ 32 H technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9.5A |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Input Capacitance @ Vds | 400@25VpF |
| Maximum Power Dissipation | 75000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BUZ 32 H Datasheet
Download the complete datasheet for Infineon BUZ 32 H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.