Infineon
BUZ100
Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Technical Specifications
Infineon BUZ100 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BUZ100 Datasheet
Download the complete datasheet for Infineon BUZ100 to view detailed technical specifications.
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