N-channel MOSFET with 200V drain-source breakdown voltage and 21A continuous drain current. Features 130mΩ on-state resistance and 125W power dissipation. Packaged in TO-220 for through-hole mounting, operating from -55°C to 150°C. Includes 30ns turn-on delay and 90ns fall time.
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Infineon BUZ30A technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.25mm |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Lead Pitch | 2.54mm |
| Length | 10mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| On-State Resistance | 130mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 180ns |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | Through Hole |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 200V |
| Width | 4.4mm |
| RoHS | Compliant |
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