N-channel enhancement mode power MOSFET in a D2PAK surface-mount package. Features a 200V drain-source voltage, 21A continuous drain current, and 130mΩ maximum drain-source resistance at 10V. This single-element SIPMOS technology component offers a maximum power dissipation of 125W and operates between -55°C and 150°C. The D2PAK package has a gull-wing lead shape and a tab for enhanced thermal performance.
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Infineon BUZ30A H3045A technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 21A |
| Maximum Drain Source Resistance | 130@10VmOhm |
| Typical Input Capacitance @ Vds | 1400@25VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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