N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 14.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 200mΩ on-state resistance and a maximum power dissipation of 95W. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14.5A |
| Current Rating | 14.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.12nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 95W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| On-State Resistance | 200mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 170ns |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 150ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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