Infineon
BUZ31H3045AATMA1
Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
MountingSurface Mount
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Technical Specifications
Infineon BUZ31H3045AATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 14.5A |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BUZ31H3045AATMA1 Datasheet
Download the complete datasheet for Infineon BUZ31H3045AATMA1 to view detailed technical specifications.
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